標題: Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si
作者: Chao, CW
Wu, YCS
Hu, GR
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: solid phase crystallization;thin-film transistor;metal-induced lateral crystallization;electroless plating and physical vapor deposition
公開日期: 1-Apr-2003
摘要: Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILL) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.
URI: http://dx.doi.org/10.1143/JJAP.42.1556
http://hdl.handle.net/11536/27991
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.1556
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 4A
起始頁: 1556
結束頁: 1559
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