標題: Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias
作者: Tsai, CW
Chen, MC
Ku, SH
Wang, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Auger recombination;forward substrate bias;hot carrier degradation;positive temperature dependence
公開日期: 1-Apr-2003
摘要: Enhanced hot carrier degradation in nMOSFETs with a forward substrate bias is observed. The degradation cannot be explained by conventional channel hot electron effects. Instead, an Auger recombination-assisted hot electron process is proposed. In the process, holes are injected from the forward-biased substrate and provide for Auger recombination with electrons in the channel thus substantially increasing channel hot electron energy. Measured hot electron gate-current and the light emission spectrum provide evidence that the high-energy tail of channel electrons is increased with a positive substrate bias. The drain current degradation is about ten time's more serious in forward-biased substrate mode than in standard mode. The Auger-enhanced degradation exhibits positive temperature dependence and may appear to be a severe reliability issue in high temperature operation condition.
URI: http://dx.doi.org/10.1109/TED.2003.812484
http://hdl.handle.net/11536/27982
ISSN: 0018-9383
DOI: 10.1109/TED.2003.812484
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 50
Issue: 4
起始頁: 1022
結束頁: 1026
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