標題: Fully silicided NiSi gate on La2O3 MOSFETs
作者: Lin, CY
Ma, MW
Chin, A
Yeo, YC
Zhu, CX
Li, MF
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CoSi2;La2O3;MOSFET;NiSi
公開日期: 1-May-2003
摘要: We have fabricated the fully silicided NiSi on La2O3 for n- and p-MOSFETs. For 900 degreesC fully silicided CoSi2 on La2O3 gate dielectric with 1.5 mn EOT, the, gate dielectric has large leakage current by possible excess Co diffusion at high silicidation temperature. In sharp contrast, very low gat e leakage current density of 2 x 10(-4) A/cm(2) at 1 V is measured for 400 degreesC formed fully silicided NiSi and comparable with Al gate. The extracted work function of NiSi was 4.42 eV, and the corresponding threshold voltages are 0.12 and -0.70 V for respective n- and p-MOSFETs. Electron and hole mobilities of 156 and 44 cm(2)/V-s are obtained for respective n- and p-MOSFETs, which are comparable with the HfO2 MOSFETs without using H-2 annealing.
URI: http://dx.doi.org/10.1109/LED.2003.812569
http://hdl.handle.net/11536/27914
ISSN: 0741-3106
DOI: 10.1109/LED.2003.812569
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 5
起始頁: 348
結束頁: 350
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