標題: High-density MIM canpacitors using AlTaOx dielectrics
作者: Yang, MY
Huang, CH
Chin, A
Zhu, CX
Li, MF
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitor;dielectric constant;frequency drpendence;high kappa;MIM;RF
公開日期: 1-May-2003
摘要: The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
URI: http://dx.doi.org/10.1109/LED.2003.812572
http://hdl.handle.net/11536/27913
ISSN: 0741-3106
DOI: 10.1109/LED.2003.812572
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 5
起始頁: 306
結束頁: 308
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