標題: VISIBLE INGAP/LNGAAIP QUANTUM-WELL TOP SURFACE-EMITTING LASER-DIODES
作者: TAI, KC
HUANG, KF
WU, CC
WYNN, JD
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
公開日期: 15-Nov-1993
摘要: Vertical cavity top surface emitting lasers emitting near 0.67 mu m visible spectral region were fabricated by one-step low pressure metalorganic vapor phase deposition technique. The lasers used four 80-Angstrom-thick InGaP/InGaAlP quantum wells active region, sandwiched between two Al0.5Ga0.5As/AlAs distributed Bragg reflectors. Room temperature pulsed threshold current was 10 mA for 15 mu m diam devices.
URI: http://dx.doi.org/10.1063/1.110343
http://hdl.handle.net/11536/2787
ISSN: 0003-6951
DOI: 10.1063/1.110343
期刊: APPLIED PHYSICS LETTERS
Volume: 63
Issue: 20
起始頁: 2732
結束頁: 2734
Appears in Collections:Articles