標題: The growth mechanism of micron-size V defects on the hydride vapor phase epitaxy grown undoped GaN films
作者: Lin, PY
Wu, YCS
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: GaN;hydride vapor phase epitaxy;V defect;epitaxial lateral overgrowth;growth mechanism
公開日期: 26-May-2003
摘要: Micron-size V defects were found on the hydride vapor phase epitaxy grown GaN films. When the film thickness increased, the diameter of V defects increased, but the density of the defects decreased. The defect has six {1 1 0 1} facets, which encircle to form a concave hexagonal pyramid. Its shape is similar to that of epitaxial lateral overgrowth (ELO) GaN crystal grown on a dot-patterned GaN underlying layer. Through the analysis of the growth mechanism of ELO GaN, the growth mechanism of the V defects was investigated. (C) 2003 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(03)00109-3
http://hdl.handle.net/11536/27852
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(03)00109-3
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 80
Issue: 2
起始頁: 397
結束頁: 400
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