標題: PVD HfO2 for high-precision MIM capacitor applications
作者: Kim, SJ
Cho, BJ
Li, MF
Yu, XF
Zhu, CX
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitance density;HfO2;metal-insulator-metal (MIM) capacitor;sputter;voltage coefficient of capacitor (VCC)
公開日期: 1-Jun-2003
摘要: Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
URI: http://dx.doi.org/10.1109/LED.2003.813381
http://hdl.handle.net/11536/27826
ISSN: 0741-3106
DOI: 10.1109/LED.2003.813381
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 6
起始頁: 387
結束頁: 389
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