標題: High-current characterization of polysilicon diode for electrostatic discharge protection in sub-quarter-micron complementary metal oxide semiconductor technology
作者: Ker, MD
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: polysilicon diode;parasitic capacitance;substrate noise;electrostatic discharge (ESD);radio frequency (RF)
公開日期: 1-Jun-2003
摘要: Polysilicon diodes used in sub-quarter-micron complementary metal oxide semiconductor (CMOS) technologies are characterized by transmission line pulse (TLP) measurement to investigate device characteristics in a high-current regime. The second-breakdown current (I-t2) of the polysilicon diode shows good linear dependence on the device junction perimeter. When the polysilicon diodes are connected in a stacked configuration for reducing parasitic capacitance, the stacked polysilicon diodes show no degradation in electrostatic discharge (ESD) robustness compared with a single polysilicon diode. Such CMOS process-compatible polysilicon diodes have been successfully used as on-chip ESD protection devices for GHz radio-frequency (RF) circuits.
URI: http://dx.doi.org/10.1143/JJAP.42.3377
http://hdl.handle.net/11536/27813
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.3377
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 6A
起始頁: 3377
結束頁: 3378
Appears in Collections:Articles


Files in This Item:

  1. 000183927800017.pdf