標題: Effect of substrate on the step coverage of plasma-enhanced chemical-vapor deposited tetraethylorthosilicate films
作者: Lan, JK
Wang, YL
Chao, CG
Lo, K
Cheng, YL
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jul-2003
摘要: Plasma-enhanced chemical-vapor deposition tetraethylorthosilicate (TEOS) films are extensively used as the interlayer dielectric films in multilevel interconnection processes. When TEOS oxide films were deposited on metal patterns three different substrates, titanium nitride (TiN), aluminum (Al), and oxide (SiO2), were used. This study examines the dependence of these substrates on TEOS step coverage. The deposition rates of TEOS oxide revealed that the SiO2 substrate lead to highest TEOS deposition rate during the initial deposition period of 5 s. Then, the TEOS deposition rate of the substrates was nearly the same. The TiN substrate exhibited the highest sidewall step coverage but the sidewall step coverage of the Al substrate deteriorated due to its granular surface. Additionally, different substrates exhibited different coverage of the bottom step. Moreover, the bottom step coverage exceeded the sidewall coverage for all substrates. (C) 2003 American Vacuum Society.
URI: http://hdl.handle.net/11536/27774
ISSN: 1071-1023
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 21
Issue: 4
起始頁: 1224
結束頁: 1229
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