Title: Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices
Authors: Ling, Shih-Chun
Wang, Te-Chung
Chen, Jun-Rong
Liu, Po-Chun
Ko, Tsung-Shine
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Tsay, Jenq-Dar
Department of Photonics
Issue Date: 1-Apr-2009
Abstract: We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 x 10(10) cm(-2) down to similar to 9 x 10(9) cm(-2). The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.04C136
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.04C136
Volume: 48
Issue: 4
End Page: 
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