標題: Lanthanide (Tb)-doped HfO2 for high-density MIM capacitors
作者: Kim, SJ
Cho, BJ
Li, MF
Zhu, CX
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: capacitance density;co-sputtering;HfO2;lanthanide;metal-insulator-metal (MIM) capacitor;voltage coefficient of capacitor (VCC)
公開日期: 1-Jul-2003
摘要: A high-density metal-insulator-metal (MIM) capacitor with a lanthanide-doped HfO2 dielectric prepared by physical vapor deposition (PVD) is presented for the first time. A significant improvement was shown in both the voltage coefficient of capacitance (VCC) and the leakage current density of MIM capacitor, yet the high capacitance density of HfO2 dielectrics was maintained by achieving the doping of Tb with an optimum concentration in HfO2. This technique allows utilizing thinner dielectric film in MIM capacitors and achieving a capacitance density as high as 13.3 fF/mum(2) with leakage current and VCC values that fully meet requirements from year 2005 for radio frequency (RF) bypass capacitors applications.
URI: http://dx.doi.org/10.1109/LED.2003.814024
http://hdl.handle.net/11536/27746
ISSN: 0741-3106
DOI: 10.1109/LED.2003.814024
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 7
起始頁: 442
結束頁: 444
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