標題: Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
作者: Li, Yiming
Hwang, Chih-Hong
Cheng, Hui-Wen
電信工程研究所
Institute of Communications Engineering
公開日期: 1-Apr-2009
摘要: Variability in the characteristics of nanoscale complementary metal-oxide-semiconductor (CMOS) field-effect transistors is a major challenge to scaling and integration. However, little attention has been focused on the existence of transient behavior fluctuations of devices owing to random dopant placement. In this study, we explore the discrete-dopant-induced transient behavior fluctuations of 16-nm-gate CMOS circuits through a three-dimensional large-scale statistically sound "atomistic" device-circuit-coupled simulation approach, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". For a 16-nm-gate CMOS inverter, a 3.5% variation of the rise time, a 2.4% variation of the fall time, an 18.3% variation of the high-to-low delay time, and a 13.2% variation of the low-to-high delay time are estimated and discussed. Fluctuation suppression techniques proposed from the device and the circuit viewpoints are implemented to examine the associated intrinsic fluctuations. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.04C051
http://hdl.handle.net/11536/27743
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.04C051
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 4
結束頁: 
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