標題: Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H films
作者: Chiang, CC
Wu, ZC
Wu, WH
Chen, MC
Ko, CC
Chen, HP
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: alpha-SiC : N : H;dielectric barrier;carbon;crosslinked;porosity
公開日期: 1-Jul-2003
摘要: In this work, we investigate the thermal stability and physical and barrier properties of three species of plasma enhanced chemical vapor deposition (PECVD) alpha-SiC:N:H silicon carbide films with different carbon and nitrogen contents and dielectric constants less than a value of 5.5. For comparison, one species of alpha-SiN:H film with a k value of 7.2 is also studied. It is found that the dielectric constant decreases with increasing content of carbon and decreasing content of nitrogen in the alpha-SiC:N:H film. All of the three species of alpha-SiC:N:H and the one species of alpha-SiN:H films are thermally stable at temperatures up to 500degreesC. However, degraded barrier capability and moisture resistance were observed for the alpha-SiC:N:H film with a k value of 3.5, which has a C/Si atomic ratio of 0.875. This is presumably due to the poorly crosslinked molecular structure and porosity enhancement caused by the abundant amount of carbon in the alphaSiC:N:H film.
URI: http://dx.doi.org/10.1143/JJAP.42.4489
http://hdl.handle.net/11536/27734
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.4489
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 7A
起始頁: 4489
結束頁: 4494
Appears in Collections:Articles


Files in This Item:

  1. 000184662000071.pdf