標題: Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilane
作者: Chiang, CC
Chen, MC
Ko, CC
Wu, ZC
Jang, SM
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: alpha-SiC : H;methylsilane;dielectric barrier;carbon;porosity
公開日期: 1-Jul-2003
摘要: This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical vapor deposited (PECVD) alpha-SiC:H silicon carbide films (with k-values less than 5) deposited using trimethylsilane, (CH3)(3)SiH (3MS) and tetramethylsilane, (CH3)(4)Si (4MS) organosilicate gases. It is found that the 4MS alpha-SiC:H film contains a higher content of carbon and has a lower dielectric constant. Both of the 3MS and 4MS alpha-SiC:H films are thermally stable at temperatures up to 500degreesC. However, degraded barrier property and moisture resistance were observed for the 4MS alpha-SiC:H film; this is attributed to the porosity enrichment caused by the film's high carbon content. The 3MS alpha-SiC:H film, which exhibits a superior Cu-barrier property, is a potential candidate for replacing the higher dielectric constant Si3N4 film as a Cu-cap barrier and etching stop layer in the Cu damascene structure.
URI: http://dx.doi.org/10.1143/JJAP.42.4273
http://hdl.handle.net/11536/27733
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.4273
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 7A
起始頁: 4273
結束頁: 4277
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