標題: HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice
作者: Li, Zhen-Yu
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Lo, Ming-Hua
Lau, K. M.
光電工程學系
Department of Photonics
關鍵字: Characterization;Metal-organic chemical vapor deposition;Quantum wells;Nitrides;Semiconducting aluminum compounds;Laser diodes
公開日期: 1-May-2009
摘要: A high-quality AlN/GaN distributed Bragg-reflectors (DBR) was successfully grown on sapphire substrate by low-pressure metal-organic chemical vapor deposition using ultra-thin AlN/GaN super-lattice insertion layers (SLILs). The reflectivity of AlN/GaN DBR with ultra-thin AlN/GaN SLIL was measured and achieved blue peak reflectivity of 99.4% at 462 nm. The effect of ultra-thin AlN/GaN super-lattice insertion layer was examined in detail by transmission electron microscopy, and indicated that the crack of AlN/GaN DBR can be suppress by inserting AlN/GaN SLIL. For electronic properties, the turn on voltage is about 4.1 V and CW laser action of vertical-cavity surface-emitting laser (VCSEL) was achieved at a threshold injection current of 1.4 mA at 77 K, with an emission wavelength of 462 nm. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.01.098
http://hdl.handle.net/11536/27709
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.01.098
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 10
起始頁: 3089
結束頁: 3092
Appears in Collections:Conferences Paper


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