|標題:||HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice|
Lau, K. M.
Department of Photonics
|關鍵字:||Characterization;Metal-organic chemical vapor deposition;Quantum wells;Nitrides;Semiconducting aluminum compounds;Laser diodes|
|摘要:||A high-quality AlN/GaN distributed Bragg-reflectors (DBR) was successfully grown on sapphire substrate by low-pressure metal-organic chemical vapor deposition using ultra-thin AlN/GaN super-lattice insertion layers (SLILs). The reflectivity of AlN/GaN DBR with ultra-thin AlN/GaN SLIL was measured and achieved blue peak reflectivity of 99.4% at 462 nm. The effect of ultra-thin AlN/GaN super-lattice insertion layer was examined in detail by transmission electron microscopy, and indicated that the crack of AlN/GaN DBR can be suppress by inserting AlN/GaN SLIL. For electronic properties, the turn on voltage is about 4.1 V and CW laser action of vertical-cavity surface-emitting laser (VCSEL) was achieved at a threshold injection current of 1.4 mA at 77 K, with an emission wavelength of 462 nm. (C) 2009 Elsevier B.V. All rights reserved.|
|期刊:||JOURNAL OF CRYSTAL GROWTH|
|Appears in Collections:||Conferences Paper|
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