標題: Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy
作者: Chen, Kuei-Ming
Huang, Hsin-Hsiung
Kuo, Yi-Lin
Wu, Pei-Lun
Chu, Ting-Li
Yu, Hung-Wei
Lee, Wei-I
電子物理學系
Department of Electrophysics
關鍵字: Free-standing GaN;HVPE;Nitrides;GaN
公開日期: 1-May-2009
摘要: Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrown on the N-polar face of the free-standing GaN by HVPE. High-resolution X-ray diffraction (HRXRD) measurements were performed to compare the bowings among GaN films before laser lift-off (LLO), after LLO, and after regrowth. The apparent reductions of XRD full-width at half-maximum (FWHM), along with the increase of XRD peak intensity, after regrowth clearly demonstrate the effectiveness of this method to eliminate bowings of the free-standing GaN films. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.01.073
http://hdl.handle.net/11536/27698
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.01.073
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 10
起始頁: 3037
結束頁: 3039
Appears in Collections:Conferences Paper


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