標題: Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
作者: Huang, Hsin-Hsiung
Chao, Chu-Li
Chi, Tung-Wei
Chang, Yu-Lin
Liu, Po-Chun
Tu, Li-Wei
Tsay, Jenq-Dar
Kuo, Hao-Chung
Cheng, Shun-Jen
Lee, Wei-I
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: Substrates;Hydride vapor phase epitaxy;Gallium;Nitride compounds
公開日期: 1-五月-2009
摘要: A 300 pm GaN thick-film, in diameter 1.5 in, was demonstrated without any crack by hydride vapor phase epitaxy (HVPE) growth. The technique used in relaxing the residual stress caused by differences of thermal expansion coefficients (TEC) and lattice constants between GaN and sapphire substrate to prevent GaN film from crack is called a dot air-bridged structure. After the laser lift-off process, 300-mu m-thick freestanding GaN wafer, in diameter 1.5 in, could be fabricated. The compressive stress in the dot air-bridged structure was measured by micro-Raman spectroscopy with the E(2)(high) phonon mode. The compressive stress could be reduced to as small as 0.04 GPa, which could prevent the crack during the epitaxial process for GaN growth by HVPE. It is important to obtain a large-area crack-free GaN thick-film, which can be used for fabricating freestanding GaN wafer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2009.01.071
http://hdl.handle.net/11536/27687
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2009.01.071
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 10
起始頁: 3029
結束頁: 3032
顯示於類別:會議論文


文件中的檔案:

  1. 000267302900068.pdf