標題: Electrical characteristics of low temperature polysilicon TFT with a novel TEOS/oxynitride stack gate dielectric
作者: Chang, KM
Yang, WC
Tsai, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: N2O-plasma oxynitride;stack oxide;thin film transistors (TFTs)
公開日期: 1-Aug-2003
摘要: This investigation is the first to demonstrate a novel tetraethylorthosilicate. (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si (LTPS) thin film transistors (TFTs), composed, of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by. PECVD N2O-plasma. The stack oxide shows a very high electrical breakdown field of 8.4 MV/cm, which is approximately 3 MV/cm larger than traditional PECVD TEOS oxide. The field effective mobility of stack oxide UPS TFTs is over 4 times than that of traditional TEOS oxide UPS TFTs. these. improvements are attributed to the high quality N2O-plasma grown ultrathin oxynitride forming strong Si drop N bonds, as well as to reduce the trap density in the dxynitride/poly-Si interface.
URI: http://dx.doi.org/10.1109/LED.2003.815155
http://hdl.handle.net/11536/27668
ISSN: 0741-3106
DOI: 10.1109/LED.2003.815155
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 8
起始頁: 512
結束頁: 514
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