標題: Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contents
作者: Chiang, CC
Chen, MC
Ko, CC
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: alpha-SiCN : H;dielectric barrier;dielectric breakdown;hydrogen bridge;Si-H weak bond
公開日期: 1-Aug-2003
摘要: This work investigates the thermal stability and physical and barrier properties of two species of plasma-enhanced chemical-vapor-deposited (PECVD) amorphous silicon-nitrocarbide (alpha-SiCN:H) films with different hydrogen contents and dielectric constants of less than 5. It is found that the alpha-SiCN:H film with a higher hydrogen content has a lower dielectric constant. Both species of alpha-SiCN:H films are thermally stable at temperatures up to 500degreesC. However, a degraded dielectric strength was observed for the alpha-SiCN:H film with a lower k-value of 4, which has a much higher hydrogen content. This may be attributed to hydrogen-related defects, such as Si-H+-Si hydrogen bridges, and numerous Si-H weak bonds produced by the high hydrogen content in the alpha-SiCN:H film.
URI: http://hdl.handle.net/11536/27657
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 8
起始頁: 5246
結束頁: 5250
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