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dc.contributor.authorLan, JKen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLiu, CPen_US
dc.contributor.authorChao, CGen_US
dc.contributor.authorAy, CYen_US
dc.contributor.authorLiu, CWen_US
dc.contributor.authorCheng, YLen_US
dc.date.accessioned2014-12-08T15:40:27Z-
dc.date.available2014-12-08T15:40:27Z-
dc.date.issued2003-09-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/11536/27615-
dc.description.abstractShallow trench isolation (STI) is extensively used as the isolation method beyond 0.18 mum generation. This study explored the formation of circular defects in high-density plasma (HDP) STI deposition. Circular defects were caused by the burst flow of silane reactive gas. The defect maps were coincident with the silane flow field. Fourier transform infrared and secondary-ion-mass spectroscopy data exhibited that the silane-burst flow formed a silicon rich oxide (SRO) film. This SRO film existed between the STI oxide and liner oxide. The circular defects were easily found using optical microscopy (OM) for STI with SRO film. Scanning electron microscopy and transmission electron microscopy photographs show that these defects include bubbles and concavities. When SRO fully covers the liner oxide, bubbles easily form by delamination between SRO film and liner oxide. This correlates with the high tensile stress produced by the SRO film. Besides this, higher STI deposition temperatures yield more bubbles. When SRO discontinuously forms on the liner oxide, the concavities were induced by the variation of STI deposition rate on SRO film and liner oxide. The surface charge difference between the SRO film and the liner oxide is the driving force for the generation of concavities. (C) 2003 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleMechanisms of circular defects for shallow trench isolation oxide depositionen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume21en_US
dc.citation.issue5en_US
dc.citation.spage2098en_US
dc.citation.epage2104en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000186126700020-
dc.citation.woscount1-
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