標題: Surface reaction of bis(tertbutylimido)bis(diethylamido)tungsten precursor on Si(100)-(2X1)
作者: Wu, JB
Yang, YW
Lin, YF
Chiu, HT
應用化學系
Department of Applied Chemistry
公開日期: 1-Sep-2003
摘要: Thermal decomposition of a metal-organic chemical vapor deposition precursor, (t-BuN=)(2)W(-NEt2)(2), (bis(tertbutylimido)bis(diethylamido)tungsten, on Si(100) has been studied by means of synchrotron radiation-based x-ray photoemission spectroscopy and temperature programmed desorption spectroscopy. The, resultant thin films consist of tungsten metal, silicon carbides and silicon nitrides. Major desorption products, originated from ligand decomposition include imine (C2H5N=CHCH3) that is derived from beta-H elimination of diethylamido ligand, and isobutene (C4H8) that is generated from gamma-H elimination of t-butylimido ligands. The. transmetalation of the precursor leads to tungsten metal adsorption on Si(100); by contrast, tungsten nitrides, tungsten carbides and tungsten oxides are produced as the same precursor is decomposed on SiO2 surface. (C) 2003 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.1593050
http://hdl.handle.net/11536/27614
ISSN: 0734-2101
DOI: 10.1116/1.1593050
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume: 21
Issue: 5
起始頁: 1620
結束頁: 1624
Appears in Collections:Conferences Paper


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