標題: Study of nickel silicide contact on Si/Si1-xGex
作者: Yang, TH
Luo, GL
Chang, EY
Yang, TY
Tseng, HC
Chang, CY
材料科學與工程學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
D Link NCTU Joint Res Ctr
關鍵字: agglomerate;Ni;SiGe;silicide
公開日期: 1-九月-2003
摘要: The properties of nickel silicide formed by depositing nickel on Si/P+ - Si1-xGex layer are compared with that of nickel germanosilicide on P+ - Si1-xGex layer formed by depositing Ni directly on P+ - Si1-xGex layer without silicon consuming layer. After thermal annealing, nickel silicide on Si/P+ S Si1-xGex layer shows lower sheet resistance and specific contact resistivity than that of nickel germanosilicide on P+ - Si1-xGex layer. In addition, small junction leakage current is also observed for nickel silicide on Si/P+ - Si1-xGex/N - Si diode. In summary, witha Si consuming layer on top of the Si1-xGex, the nickel silicide contact formed demonstrated improved electrical and materials characteristics as compared with the nickel germanosilicide contact which was formed directly on Si1-xGex layer.
URI: http://dx.doi.org/10.1109/LED.2003.815944
http://hdl.handle.net/11536/27569
ISSN: 0741-3106
DOI: 10.1109/LED.2003.815944
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 9
起始頁: 544
結束頁: 546
顯示於類別:期刊論文


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  1. 000184924700006.pdf