標題: Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
作者: Liang, MW
Hsieh, TE
Chang, SY
Chuang, TH
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: diffusion soldering;die attachment;intermetallic compounds;kinetics analysis;bonding strength
公開日期: 1-Sep-2003
摘要: The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250degreesC and 400degreesC by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) eta-(Cu0.99Au0.01)(6)Sn(5/)delta-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)(6)Sn-5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm(2) could be attained under the bonding condition of 300degreesC for 20 min.
URI: http://hdl.handle.net/11536/27556
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 32
Issue: 9
起始頁: 952
結束頁: 956
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