標題: Electron spin filtering in all-semiconductor tunneling structures
作者: Yu, L
Huang, HC
Voskoboynikov, O
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nano-structures;spin-orbit interaction;tunneling
公開日期: 1-Sep-2003
摘要: In this work we briefly review the present day perspectives for exploiting conventional nonmagnetic semiconductor nano-technology to design high speed spin-filter devices. In recent theoretical investigations a high spin polarization has been predicted for the ballistic tunneling current in semiconductor single- and double-barrier asymmetric tunnel structures of III-V semiconductors with strong Rashba spin-orbit coupling. We show in this paper that the polarization in the tunneling can probability be sufficiently increased for producing realistic single-barrier structures by including of the Dresselhaus term into consideration. (C) 2004 Published by Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.spmi.2004.03.056
http://hdl.handle.net/11536/27552
ISSN: 0749-6036
DOI: 10.1016/j.spmi.2004.03.056
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 34
Issue: 3-6
起始頁: 547
結束頁: 552
Appears in Collections:Conferences Paper


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