標題: The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors
作者: Lee, YJ
Chao, TS
Huang, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: DTMOS;gate oxide;subthreshold swing
公開日期: 1-Sep-2003
摘要: In this paper, we discuss dynamic threshold MOS (DTMOS) operations for nMOSFETs of different dielectric types and thicknesses. We found that, under the DT mode of operation, all devices exhibit a threshold voltage close to 0.7 V, independent of the thickness and gate dielectric type of the device. This is due to the diminished influence of the body effect factor. Formulations of threshold voltage and subthreshold swing of DTMOS are developed to gain insights into this unique phenomenon, and simulation of the subthreshold swing is also provided.
URI: http://dx.doi.org/10.1143/JJAP.42.5405
http://hdl.handle.net/11536/27550
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.5405
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 9A
起始頁: 5405
結束頁: 5409
Appears in Collections:Articles


Files in This Item:

  1. 000185565300002.pdf