標題: High-performance microwave coplanar bandpass and bandstop filters on Si substrates
作者: Chan, KT
Chin, A
Li, MF
Kwong, DL
McAlister, SP
Duh, DS
Lin, WJ
Chang, CY
電子工程學系及電子研究所
電信工程研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Communications Engineering
關鍵字: bandpass;bandstop;filter;integration;millimeter wave;Si
公開日期: 1-Sep-2003
摘要: High-performance bandpass and bandstop microwave coplanar filters, which operate from 22 to 91 GHz, have been fabricated on Si substrates. This was achieved using an optimized proton implantation process that converts the standard low-resistivity (similar to10 Omega (.) cm) Si to a semi-insulating state. The bandpass filters consist of coupled lines to form a series resonator, while the bandstop filter was designed in a double-folded short-end stub structure. For the bandpass filters at 40 and 91 GHz, low insertion loss was measured, close to electromagnetic simulation values. We also fabricated excellent bandstop filters with very low transmission loss of similar to1 dB and deep band rejection at both 22 and 50 GHz. The good filter performance was confirmed by the higher substrate impedance to ground, which was extracted from the well-matched S-parameter equivalent-circuit data.
URI: http://dx.doi.org/10.1109/TMTT.2003.815890
http://hdl.handle.net/11536/27542
ISSN: 0018-9480
DOI: 10.1109/TMTT.2003.815890
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 51
Issue: 9
起始頁: 2036
結束頁: 2040
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