標題: A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE
作者: LIN, KC
HSIN, YM
CHANG, CY
CHANG, EY
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
公開日期: 1-十二月-1993
摘要: A high band-gap GaInP epitaxial material was grown on InP to increase the Schottky barrier height of the InP MESFET. The Schottky gate materials used in this study were Au and Pt,Si. The pseudomorphic GaInP/InP MESFET with Au gate has a Schottky barrier height of 0.54 eV and the reverse leakage current of the device is 10(-2) times lower than the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET were 66.7 and 104.2 mS/mm respectively for the 5 mu m gate length GaInP/InP MESFET.
URI: http://dx.doi.org/10.1109/16.249488
http://hdl.handle.net/11536/2753
ISSN: 0018-9383
DOI: 10.1109/16.249488
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 40
Issue: 12
起始頁: 2361
結束頁: 2362
顯示於類別:期刊論文


文件中的檔案:

  1. A1993MP36300030.pdf