標題: The role of nitrogen in carbon nanotube formation
作者: Lin, CH
Chang, HL
Hsu, CM
Lo, AY
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nitrogen;formation mechanism;bamboo-like nanotubes;chemical vapor deposition
公開日期: 1-Oct-2003
摘要: To examine the role of nitrogen, Co- and Ni-coated substrates were pretreated with three different gas compositions to compare the pretreated catalyst surfaces; the Fe, Co and Ni foils were subjected to carbon nanotube (CNT) growth experiments with CH4/H-2 and CH4/N-2 as source gases; the catalyst pretreatment plus the CNT growth experiments on Co- and Ni-coated Si substrates were carried out using both microwave plasma chemical vapor deposition and electron cyclotron resonance chemical vapor deposition (ECR-CVD) under different nitrogen-containing gases. The results show that the role of nitrogen may be summarized as follows: by comparing with hydrogen plasma, the bombardment energy of nitrogen plasma is greater. Therefore, the presence of nitrogen during CNT growth can keep the front catalyst surface clean and active to prolong surface passivation to enhance carbon bulk diffusion. The higher temperature due to higher bombardment energy of nitrogen plasma can promote agglomeration effects during catalyst pretreatment and the initial stage of CNT growth to produce larger size nano-particles. The presence of nitrogen is a favorable condition for formation of the bamboo-like CNTs, but not a necessary condition. Another favorable condition for formation of the bamboo-like CNTs is to deposit CNTs by ECR-CVD. (C) 2003 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0925-9635(03)00209-7
http://hdl.handle.net/11536/27506
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(03)00209-7
期刊: DIAMOND AND RELATED MATERIALS
Volume: 12
Issue: 10-11
起始頁: 1851
結束頁: 1857
Appears in Collections:Conferences Paper


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