標題: Characterization of temperature dependence for HfO2 gate dielectrics treated in NH3 plasma
作者: Wang, JC
Shie, DC
Lei, TF
Lee, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Oct-2003
摘要: For the first time, the characteristics and temperature dependence of electrical properties for ultrathin HfO2 gate dielectrics treated in NH3 plasma after deposition were investigated. After this treatment, significant nitrogen incorporation at the HfO2/silicon interface (interfacial layer) was examined by Auger electron spectroscopy. Moreover, the formation of Hf-N bonding and the suppression of Hf-Si bonding were observed from electron spectroscopy for chemical analysis spectra. The activation energy of charge trapping reflected in the current-voltage characteristics was effectively reduced, which led to improved hysteresis and its weaker temperature dependence in HfO2 gate dielectrics treated in NH3 plasma. (C) 2003 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1605272
http://hdl.handle.net/11536/27469
ISSN: 1099-0062
DOI: 10.1149/1.1605272
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 6
Issue: 10
起始頁: F34
結束頁: F36
Appears in Collections:Articles