標題: Characterizing trench-gate power metal-oxide-semiconductor field effect transistor with multi-layer dielectrics at the trench bottom
作者: Lin, MJ
Liaw, CW
Chang, FL
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: trench-gate MOSFET;ONO;specific on-resistance;switching mode power;gate charge
公開日期: 1-Nov-2003
摘要: Power devices with a high switching speed and a low conduction resistance are crucially important in power conversion circuits. In this study, a trench-gate power metal-oxide-semiconductor field effect transistor (MOSFET) with a high-density cell design 20.6 Mcell/cm(2) was implemented for the first time using multilayer dielectrics with an oxide-nitride-oxide (ONO) structure at the bottom of the trench. The thick ONO dielectric layers at the bottom of the trench compensate for the increase in Miller capacitance per unit area as the cell density increases. The resulting device exhibits excellent characteristics of gate charge, switching power loss, gate oxide quality and practical process stability, superior to those of the conventional structure. An n-channel 25.8 V trench gate MOSFET with a specific on-resistance of 0.15 mOmegam(2), and R-ON x Q(GD) figure-of-merit 41 mOmega.nC is presented.
URI: http://hdl.handle.net/11536/27439
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 42
Issue: 11
起始頁: 6795
結束頁: 6799
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