標題: Integrated antennas on Si with over 100 GHz performance, fabricated using an optimized proton implantation process
作者: Chan, KT
Chin, A
Lin, YD
Chang, CY
Zhu, CX
Li, MF
Kwong, DL
McAlister, S
Duh, DS
Lin, WJ
電子工程學系及電子研究所
電信工程研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Communications Engineering
關鍵字: antenna;implantation;loss;RF;transmission line
公開日期: 1-Nov-2003
摘要: We have improved the performance of integrated antennas on Si for possible application in wireless communications and wireless interconnects. For practical VLSI integration, we have reduced the antenna size and optimized the proton implantation to a low energy of similar to 4 MeV with a depth of similar to 175 mum. To avoid any possible contamination, the ion implantation is applied after device fabrication. Excellent performance such as very low RF power loss up to 50 GHz, record high 103 GHz antenna resonance, and sharp 5 GHz bandwidth have been achieved.
URI: http://dx.doi.org/10.1109/LMWC.2003.817146
http://hdl.handle.net/11536/27427
ISSN: 1531-1309
DOI: 10.1109/LMWC.2003.817146
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 13
Issue: 11
起始頁: 487
結束頁: 489
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