標題: Field emission properties of vertically aligned carbon nanotubes grown on bias-enhanced hydrogen plasma-pretreated Cr film
作者: Chen, CF
Lin, CL
Wang, CM
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: carbon;chemical vapor deposition;chromium;field emission
公開日期: 1-Nov-2003
摘要: Using CH4/H-2 source gases, vertically aligned carbon nanotubes were grown on a Cr film by microwave plasma chemical vapor deposition. The Cr film on a silicon wafer had a constant thickness of 100 nm, and bias-enhanced H, plasma pre-treatment was performed for various periods to modify the surface of the Cr film. Bias voltage of - 150 V was applied during both pre-treatment and growth steps, the resultant carbon nanotubes on a Cr film, which had been pretreated in bias-enhanced H-2 plasma for 5 min were vertically aligned. The field emission properties of the resultant carbon nanotubes included an emission current of 0.305 mA at 2 V/mum; and a turn-on field of 1.7 V/mum. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0040-6090(03)01022-8
http://hdl.handle.net/11536/27409
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(03)01022-8
期刊: THIN SOLID FILMS
Volume: 444
Issue: 1-2
起始頁: 64
結束頁: 69
Appears in Collections:Articles


Files in This Item:

  1. 000186244700010.pdf