標題: The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
作者: Chiu, SY
Wang, YL
Liu, CP
Lan, JK
Ay, C
Feng, MS
Tsai, MS
Dai, BT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: chemical mechanical polishing;aluminum;titanium;selectivity
公開日期: 15-Nov-2003
摘要: In situ electrochemical measurements were performed for Al and Ti disks in various slurries during polishing and static conditions. The electrochemical results obtained from the corrosion potential drop of Al polishing have verified that the maximum removal rate of metal CMP can be achieved when the removal rate of the surface oxide was equal to its growth rate. However, Ti polishing did not exist maximum removal rate. The effects of H2O2%, pH values and pressure on the Al and Ti polishing behaviors were explored by using potentiodynamic scan. The corrosion potential drop was found to be a good index for polishing removal rate. The corrosion potential drop changed with increasing H2O2% for Al polishing and there existed a maximum value. But the corrosion potential drop increased with increasing H2O2% for Ti polishing. The pH value had different effects on Al and Ti polishing. Higher pH values gave higher Al removal rate but lower Ti removal rate. The Al polishing showed more pressure sensitive than Ti polishing did. The galvanic current was measured for AIM polishing. For slurry with 6 vol.% H2O2 and pH = 4, the abraded Al electrode obtained a negative current, which implied Ti oxidation was enhanced. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0254-0584(03)00312-2
http://hdl.handle.net/11536/27391
ISSN: 0254-0584
DOI: 10.1016/S0254-0584(03)00312-2
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 82
Issue: 2
起始頁: 444
結束頁: 451
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