標題: Optical studies of the Holmium-doped InGaAsP epilayers
作者: Lee, YC
Shu, GW
Cheng, IM
Chen, CP
Shen, JL
Uen, WY
Chang, CW
Chen, YF
Chou, WC
電子物理學系
Department of Electrophysics
公開日期: 1-Dec-2003
摘要: Photoluminescence (PL), contactless electroreflectance (CER), and Raman scattering measurements have been used to study the structural properties of Ho-doped InGaAsP epilayers. Both the full width at half maximum (FWHM) of PL and the broadening parameter of CER are decreased as the doping amount of Ho element increases. This indicates that Ho doping greatly reduces the residual impurities and improve the quality of epilayers. The Raman spectra of Ho-doped InGaAsP epilayers are found to have asymmetric line shapes. Using a spatial correlation model, it is found the asymmetric broadening of the Raman signal is not influenced by the Ho doping. We hence conclude that the introduction of the Ho element can greatly reduce the residual impurities of LPE-grown layers, but no large amounts of Ho element are being incorporated into the epilayers during the purification. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI: http://dx.doi.org/10.1002/pssa.200306702
http://hdl.handle.net/11536/27362
ISSN: 0031-8965
DOI: 10.1002/pssa.200306702
期刊: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
Volume: 200
Issue: 2
起始頁: 439
結束頁: 445
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