標題: Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
作者: Yu, DS
Wu, CH
Huang, CH
Chin, A
Chen, WJ
Zhu, CX
Li, MF
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOSFET;NiGe;NiSi
公開日期: 1-Dec-2003
摘要: We have fabricated the fully silicided NiSi and germanided NiGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi1-xGex. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.
URI: http://dx.doi.org/10.1109/LED.2003.819274
http://hdl.handle.net/11536/27358
ISSN: 0741-3106
DOI: 10.1109/LED.2003.819274
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 12
起始頁: 739
結束頁: 741
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