標題: High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
作者: Ding, SJ
Hu, H
Lim, HF
Kim, SJ
Yu, XF
Zhu, CX
Li, MF
Cho, BJ
Chan, DSH
Rustagi, SC
Yu, MB
Chin, A
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: atomic layer deposition (ALD);HfO2-Al2O3 laminate;high-k;metal-insulator-metal (MIM) capacitor
公開日期: 1-Dec-2003
摘要: For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications.
URI: http://dx.doi.org/10.1109/LED.2003.820664
http://hdl.handle.net/11536/27357
ISSN: 0741-3106
DOI: 10.1109/LED.2003.820664
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 24
Issue: 12
起始頁: 730
結束頁: 732
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