標題: Detection wavelength and device performance tuning of InAs QDIPs with thin AlGaAs layers
作者: Wang, S. Y.
Ling, H. S.
Lo, M. C.
Lee, C. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Quantum dot;Intersubband;Infrared detector
公開日期: 1-Nov-2009
摘要: QDIPs with thin inserted AlGaAs layers adjacent to the QDs were investigated for the tailoring of detection wavelength and device performance. Simple InAs/GaAs QDIPs and DWELL QDIPs with different insertion layer structure were studied. The thin AlGaAs layer is shown to effectively modify the electron wavefunction and associated confined state energies which lead to the change of the detection wavelength and the polarization dependent quantum efficiency. Furthermore. the dark current and gain also change with different device structures. The insertion of AlGaAs layers provides an additional freedom of tuning the electronics states involved in the infrared detection and also enables the improvement of the absorption and device performance. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.infrared.2009.05.033
http://hdl.handle.net/11536/27343
ISSN: 1350-4495
DOI: 10.1016/j.infrared.2009.05.033
期刊: INFRARED PHYSICS & TECHNOLOGY
Volume: 52
Issue: 6
起始頁: 264
結束頁: 267
Appears in Collections:Conferences Paper


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