標題: FREE-CARRIER ABSORPTION IN QUANTUM-WELL STRUCTURES FOR ACOUSTIC-PHONON SCATTERING
作者: WU, CC
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 1994
摘要: Free-carrier absorption has been studied for quantum well structures fabricated from III-V semiconducting materials where the acoustic phonon scattering is important. The energy band of carriers is assumed to be nonparabolic. We discuss the effect of acoustic phonon scattering on the free-carrier absorption for both deformation-potential coupling and piezoelectric coupling. It is found that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the layer plane or quantum well, the photon frequency, and the temperature. When the deformation-potential coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane or perpendicular to the layer plane. However, when the piezoelectric coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane, but for photons polarized perpendicularly to the layer plane, the free-carrier absorption coefficient decreases with increasing temperature. Moreover, at high temperatures such as T = 300 K, the free-carrier absorption coefficient oscillates with the film thickness in a small quantum well region and then decreases monotonically with increasing the film thickness. This is different from the result for three-dimensional semiconducting solids.
URI: http://hdl.handle.net/11536/2734
http://dx.doi.org/10.1006/spmi.1994.1021
ISSN: 0749-6036
DOI: 10.1006/spmi.1994.1021
期刊: SUPERLATTICES AND MICROSTRUCTURES
Volume: 15
Issue: 2
起始頁: 109
結束頁: 112
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