標題: Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow
作者: Ku, Ching-Shun
Huang, Jheng-Ming
Lin, Chih-Ming
Lee, Hsin-Yi
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: ZnO;Atomic layer deposition;Flow-rate interruption;X-ray diffraction
公開日期: 31-Dec-2009
摘要: We formed epitaxial ZnO thin films on a (0001) c-plane sapphire substrate through deposition of atomic layers (ALD) at 25-160 degrees C using diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow. High-resolution X-ray diffraction measurements were employed to characterize the microstructure of these films. With interrupted flow, we obtained ZnO thin films with an optimal growth window in a range of 40-160 degrees C, effectively decreasing the growth temperature by about 120 degrees C relative to a conventional method involving continuous flow. X-ray reflectivity measurements showed that the rate of growth increased also between 20 degrees C and 120 degrees C. The XRD results indicate that the stock time might extend the reaction of DEZn and water through an increased duration. All results show that a low temperature for growth improves the crystalline quality and is consistent with thermodynamically blocked self-compensation. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2009.09.018
http://hdl.handle.net/11536/27264
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.09.018
期刊: THIN SOLID FILMS
Volume: 518
Issue: 5
起始頁: 1373
結束頁: 1376
Appears in Collections:Conferences Paper


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