標題: Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxane
作者: Chiang, CC
Chen, CC
Li, LJ
Wu, ZC
Jang, SM
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: This work investigates the thermal stability and physical and barrier properties for three species of amorphous silicon-oxycarbide (alpha-SiCO) dielectric barrier films, deposited by plasma-enhanced chemical vapor deposition (PECVD), to copper (Cu) diffusion using octamethylcyclotetrasiloxane precursor and helium (He) carrier gas with and without oxygen (O-2) reaction gas. The alpha-SiCO dielectric barrier film deposited by PECVD without O-2 reaction gas exhibits a low k-value of 2.8, thermally stable at temperatures up to 550 degreesC, excellent moisture resistance, and superb Cu barrier property until 400 degreesC. With the addition of O-2 reaction gas during the dielectric deposition process, the dielectric constant of the alpha-SiCO dielectric barrier films increases with increasing flow rate of O-2 reaction gas. Increasing flow rate of O-2 reaction gas during the deposition of the alpha-SiCO dielectric barrier films also degrades the thermal stability and moisture resistance of the dielectric barrier films. Moreover, the addition of O-2 reaction gas also results in a degraded Cu barrier property of dielectric films. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27246
http://dx.doi.org/10.1149/1.1778169
ISSN: 0013-4651
DOI: 10.1149/1.1778169
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 151
Issue: 9
起始頁: G612
結束頁: G617
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