標題: Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodes
作者: Lin, CY
Chin, A
Hou, YT
Li, MF
McAlister, SP
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Al2O3;electroluminescence;light;light-emitting device (LED);SiGe
公開日期: 1-Jan-2004
摘要: We have fabricated Sn:In2O3 (ITO)-Al2O3 dielectric on Si1-xGex-Si metal-oxide-semiconductor tunnel diodes which emit light at around 1.3 mum, for x = 0.7. The emitted photon energy is smaller than the bandgap energy of Si, thus, avoiding strong light absorption by the Si substrate. The optical device structure is compatible with that of a metal-oxide-semiconductor field-effect transistor, since a conventional doped poly-Si gate electrode will be transparent to the emitted light. Increasing the Ge composition from 0.3 to 0.4 only slightly decreases the light-emitting efficiency.
URI: http://dx.doi.org/10.1109/LPT.2003.818922
http://hdl.handle.net/11536/27237
ISSN: 1041-1135
DOI: 10.1109/LPT.2003.818922
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 16
Issue: 1
起始頁: 36
結束頁: 38
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