標題: Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma
作者: Chang, KM
Yang, WC
Tsai, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dielectric films;gate oxide;nitrous oxide plasma;polycrystalline-silicon thin-film transistor (polysilicon TFT);reliability
公開日期: 1-Jan-2004
摘要: This paper proposes a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si thin-film transistors, composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin, oxynitride grown by PECVD N2O plasma. The novel stack gate dielectric exhibits a very high electrical breakdown field of 8.5 MV/cm, which is approximately 3 MV/cm higher than traditional PECVD TEOS oxide. The novel stack oxide also has better interface quality, lower bulk-trap density, and higher long-term reliability than PECVD TEOS dielectrics. These improvements are attributed to the formation of strong Si drop N bonds of high quality ultra-thin oxynitride grown by PEVCD N2O plasma, and the reduction in the trap density at the oxynitride/poly-Si interface.
URI: http://dx.doi.org/10.1109/TED.2003.820791
http://hdl.handle.net/11536/27177
ISSN: 0018-9383
DOI: 10.1109/TED.2003.820791
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 51
Issue: 1
起始頁: 63
結束頁: 67
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