標題: HYDROGENATED AMORPHOUS-SILICON CARBIDE P-I-N THIN-FILM LIGHT-EMITTING-DIODES WITH BARRIER LAYERS INSERTED AT P-I INTERFACE
作者: JEN, TS
PAN, JW
SHIN, NF
TSAY, WC
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: HYDROGENATED AMORPHOUS SILICON CARBIDE (A-SIC, H);LIGHT-EMITTING DIODE (LED);BARRIER LAYER;ELECTROLUMINESCENCE
公開日期: 1-Jan-1994
摘要: To improve the electroluminescence (EL) intensity of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier-layer (BL) structure had been inserted at its p-i interface and used to enhance the hole injection efficiency of TFLED under forward-bias operation. Two TFLEDs with different BL structures were studied. The device I had a 25 Angstrom A i-type single-barrier structure and the device II had an i-type double-barrier structure of barrier (10 Angstrom A)/well(10 Angstrom A)/barrier(10 Angstrom A). The obtainable brightness of device I was 342 cd/m(2) at an injection current density of 600 mA/cm(2). On the other hand, the device II had a brightness of 256 cd/ m(2) at 800 mA/cm(2). These brightnesses were about 3 orders of magnitude higher than that of a basic a-SiC:H p-i-n TFLED.
URI: http://dx.doi.org/10.1143/JJAP.33.827
http://hdl.handle.net/11536/2717
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.827
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 1B
起始頁: 827
結束頁: 831
Appears in Collections:Conferences Paper


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