標題: COMPOSITION MODULATION OF INXGA1-XAS QUANTUM-WELLS BY FAST DIMER ARSENIC FLUX CHANGE USING VALVED ARSENIC CRACKER
作者: LIU, DC
LEE, CP
TSAI, KL
TSANG, JS
CHEN, HR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: COMPOSITION MODULATION;CRACKER;QUANTUM WELLS;PHOTOLUMINESCENCE;SEMICONDUCTOR LASERS
公開日期: 1-一月-1994
摘要: By fast change of the As-2 flux using a high temperature valved cracker, we have demonstrated the growth of strained InxGa1-xAs quantum wells with different compositions. The modulation of composition is due to the change in incorporation rates of the group III atoms under different As-2 fluxes. Photoluminescence (PL) emission from the quantum wells clearly indicates the change in composition. A change of In composition from 20.6% to 8.5%, has been achieved by changing the V/III beam-equivalent-pressure (BEP) ratio from 11.7 to 3.9. By this technique of composition modulation, we have fabricated strained InxGa1-xAs/GaAs single quantum well lasers with different emission wavelengths.
URI: http://dx.doi.org/10.1143/JJAP.33.763
http://hdl.handle.net/11536/2716
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.763
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 1B
起始頁: 763
結束頁: 766
顯示於類別:會議論文


文件中的檔案:

  1. A1994MV67800082.pdf