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dc.contributor.authorChen, KWen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorChang, Len_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorLi, FYen_US
dc.contributor.authorLin, SHen_US
dc.date.accessioned2014-12-08T15:39:46Z-
dc.date.available2014-12-08T15:39:46Z-
dc.date.issued2004en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/27152-
dc.identifier.urihttp://dx.doi.org/10.1149/1.1795632en_US
dc.description.abstractAfter chemical mechanical planarization (CMP) processes, copper microcorrosion was found in a specific pattern, which consisted of two sides of small trench islands connected by a long underlayer metal line. The depth of the copper recess was strongly dependent on the length of the underlayer metal line as well as the size of the trench islands. This phenomenon was different from typical photocorrosion; it was suggested to be induced by the additional electrochemical potential from the connection of the trench islands. Auger analysis proves that higher copper oxidation rate occurred on the specific pattern compared to those without connection. In addition, the pattern-dependent microcorrosion was identified by blocking the connection of the trench islands. A proposed model was given to account for the enhanced copper corrosion from the specific patterns during CMP. (C) 2004 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titlePattern-dependent copper microcorrosion from CMPen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1795632en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume7en_US
dc.citation.issue10en_US
dc.citation.spageG238en_US
dc.citation.epageG239en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000228539400046-
dc.citation.woscount17-
Appears in Collections:Articles