標題: Investigation of the electrical properties and reliability of amorphous SiCN
作者: Chen, CW
Chang, TC
Liu, PT
Tsai, TM
Huang, HC
Chen, JM
Tseng, CH
Liu, CC
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: barrier dielectric;a-SiC;BTS;Cu penetration;low-k
公開日期: 30-Jan-2004
摘要: Amorphous SiCN (a-SiCN) is a candidate for barrier dielectric and has lower dielectric constant (ksimilar to5) relative to the commonly used barrier SiN (ksimilar to7). In this study, we investigate the leaky behavior and barrier characteristics of a-SiCN (k: 4similar to5) doped with different nitrogen concentration. The leaky behavior of a-SiCN is Poole-Frenkel at high electric field. This is similar to SiN. Thermal stability of a-SiCN films is good enough to meet the prescription in back-end-of-line fabrication process. The bias-temperature stress (BTS) test has been conducted on a-SiCN to investigate the barrier ability against copper 15/16penetration. We find that a-SiCN could sustain the stress of electric field up to 4 mV/cm at 150 degreesC. In addition, a-SiCN films with higher nitrogen concentration exhibit better barrier property against copper penetration. The SIMS spectra also have been used to monitor the distributions of copper after different BTS conditions, confirming our inference on leakage mechanism. (C) 2003 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2003.09.053
http://hdl.handle.net/11536/27119
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2003.09.053
期刊: THIN SOLID FILMS
Volume: 447
Issue: 
起始頁: 632
結束頁: 637
Appears in Collections:Conferences Paper


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