標題: Study on precipitations of fluorine-doped silicon oxide
作者: Wu, J
Wang, YL
Liu, CP
Chang, SC
Kuo, CT
Ay, C
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: fluorine-doped silicon oxide;precipitations
公開日期: 30-Jan-2004
摘要: Precipitation on fluorine-doped silicon oxide film (SiOF) was observed while exposure to air for a prolonged period of time (>4 h). Most of the precipitates are less than 1 mum and clustered at wafer center. Under SEM view, the precipitation shows hexagonal shape, and mainly composed of Si and O. SIMS analysis showed that SiOF films without F precipitates showed leveling F% profile, whereas SIMS result for SiOF films with precipitations shows increasing gradient with depth. In this study, factors affecting the precipitation of SiOF film were investigated. Humidity in environment was found to be one of the essential elements for the onset of precipitation. Process optimization and control methodologies were also investigated for precipitation prevention to provide a more robust and stable SiOF film, hence ensuring the reliability of device performance. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2003.07.029
http://hdl.handle.net/11536/27118
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2003.07.029
期刊: THIN SOLID FILMS
Volume: 447
Issue: 
起始頁: 599
結束頁: 604
Appears in Collections:Conferences Paper


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