標題: Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
作者: Chen, KW
Wang, YL
Liu, CP
Yang, K
Chang, L
Lo, KY
Liu, CW
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: copper;chemical mechanical planarization (CMP);computer simulation
公開日期: 30-一月-2004
摘要: According to rapid development of CMP technology, the difference of polishing methods would be applied for copper damascene interconnect. These methods include conventional rotary, linear, oscillation platform. The advantages of these platform would highlighted in uniformity control, stability of removal rate, planarization efficiency, throughput promotion, lower cost of ownership, even dishing and erosion effect integrated with slurry. This paper presented our experience to compare the uniformity, removal rate and planarization efficiency of Cu-CMP between various polishing platforms. In convection, the rotary or oscillation platform would be usually applied in oxide and tungsten CMP, due to the robust air-back carrier and rigid platen to polish the wafer, which performs the good reliability on wafer-to-wafer thickness and endpoint detection. However, the linear polisher is made of the air-bearing moving belt and self-rotated carrier and would provide the wider uniformity and planarization control window than others. In addition,, the simulation model would explain the difference from mechanic design and wafer moving paths between various polishing techniques. Hence, the trade-off advantage and application between various platforms would be compensated and integrated with slurry, conditioners and coming thickness profile from copper plating. It can achieve the optimization of Cu-CMP process. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2003.07.015
http://hdl.handle.net/11536/27116
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2003.07.015
期刊: THIN SOLID FILMS
Volume: 447
Issue: 
起始頁: 531
結束頁: 536
顯示於類別:會議論文


文件中的檔案:

  1. 000188995700092.pdf