標題: CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
作者: Chang, TC
Tsai, TM
Liu, PT
Chen, CW
Yan, ST
Aoki, H
Chang, YC
Tseng, T
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical mechanical polishing;ultra low-k;porous-polysilazane films;copper
公開日期: 30-Jan-2004
摘要: In this article, we investigated the impact of chemical mechanical polishing (CMP) on an ultra low dielectric constant (ultra low-k) material Porous-Polysilazane (PPSZ) with slurries of metal polishing during interconnect manufacture process. Since the CMP processing of metals such as TaN and Cu are inevitable steps for interconnect fabrication, we have utilized two types of slurries (marked as TaN and Cu slurries) to evaluate their effects on the dielectric properties of PPSZ films. Electrical and material analyses have shown surface planarity and dielectric properties of PPSZ films will not be degraded during these metal CMP processes. This indicates that the ultra low-k PPSZ films are promising for inter-level dielectric (ILD) applications in ultra large-scale integrated circuits (ULSI) technology. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2003.07.028
http://hdl.handle.net/11536/27115
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2003.07.028
期刊: THIN SOLID FILMS
Volume: 447
Issue: 
起始頁: 524
結束頁: 530
Appears in Collections:Conferences Paper


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