標題: Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriers
作者: Chiang, CC
Ko, IH
Chen, MC
Wu, ZC
Lu, YC
Jang, SM
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-2004
摘要: This work investigates the leakage and breakdown mechanisms in copper (Cu) comb capacitors with carbon-doped low-k plasma-enhanced chemical vapor deposited organosilicate glass (OSG; k = 3) as the intermetal dielectric and an alpha-SiCN (k = 5)/ alpha-SiC (k = 4) bilayer-structured dielectric film as the Cu-cap barrier. The leakage mechanism between Cu lines is dependent on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier. Using an alpha-SiCN/alpha-SiC bilayer barrier of 40 nm/10 nm or 30 nm/20 nm bilayer thickness, the increased leakage current (Frenkel-Poole emission) between Cu lines is attributed to the large number of interfacial defects, such as cracks, voids, traps or dangling bonds at the alpha-SiC/OSG interface, which are generated by the larger tensile force of the thicker alpha-SiC film. The Cu comb capacitor with an alpha-SiCN (50 nm)/alpha-SiC (2 nm) bilayer barrier exhibits a much smaller leakage current. The breakdown field and time-dependent dielectric breakdown lifetime of the Cu comb capacitor reveal little dependence on the thickness ratio of the alpha-SiCN/alpha-SiC bilayer barrier, and the observed breakdown of the Cu comb capacitor is presumably due to dielectric breakdown of the bulk OSG layer. (C) 2004 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1639169
http://hdl.handle.net/11536/27111
ISSN: 0013-4651
DOI: 10.1149/1.1639169
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 151
Issue: 2
起始頁: G93
結束頁: G97
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